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 BYP57 / BYP58 35A Silicon Power Rectifier Diode
Part no.
Description
The BYP57/58 are plastic sealed 35A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for parallel connecting in rectifier stacks and backoff-diodes
Features
* * * *
Applications
* * * *
Forward current 35A Reverse voltage 75V - 800V Hermetic press-fit package Available in different modifications of the package
Power supplies Rectifier diode in car generators Rectifier bridges/stacks Back-off-diodes
Pinout details
BYP57: 1 - cathode 2 - anode BYP58: 1 - anode 2 - cathode
Typical application circuit
Six pulse bridge connection ~ ~ ~
1
3 x BYP57-1200
3 x BYP58-1200
2
+ -
Ordering information
Device BYP57-75; ...; BYP57-800 BYP58-75; ...; BYP58-800 Quantity per box 400 400 Options The package quantities for the different package modifications are included in "PressFitPackageModifications.pdf"
Device marking
Devices are identified by type. Colour of marking: BYP57- black, BYP58 - red 422............................................... date code 422 = 2004 week 22 ZETEX BYP57....................................... diode type 400......................................... repetitive peak reverse voltage VRRM (in V) 400 Issue 4 - September 2006
(c) Zetex Semiconductors plc 2006
1
www.zetex.com
BYP57 / BYP58
Absolute maximum ratings (at Tamb = 25C unless otherwise stated)
Parameter BYP57-75 BYP57-100 BYP57-150 BYP57-200 Repetitive peak reverse voltage BYP57-300 BYP57-400 BYP57-500 BYP57-600 BYP57-700 BYP57-800 BYP58-75 BYP58-100 BYP58-150 BYP58-200 BYP58-300 BYP58-400 BYP58-500 BYP58-600 BYP58-700 BYP58-800 IFAV IFSM 500 1800 Maximum rated value idt 1250 Repetitive peak forward current Effective forward current Junction temperature Storage temperature range IFRM=*IFAV IFRMS TJmax Tstg 110 55 175 - 50 to + 140 A A C C As VRRM Symbol 75 100 150 200 300 400 500 600 700 800 35 600 Surge forward current A A half-sine wave, 10 ms TJ = 175C half-sine wave, 10 ms half-sine wave, 10 ms TJ = 175C half-sine wave, 10 ms f = >15 Hz V Tc = 140C Unit Test condition
Forward current, arithmetic value
Issue 4 - September 2006
(c) Zetex Semiconductors plc 2006
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BYP57 / BYP58
Thermal resistance
Parameter Junction to case Symbol RJC Value 1.0 Unit C/W
Thermal characteristics
40 30 IF (A) 20 10 0 -50 -25 0 25 50 TC (C) 75 100
108C
140C 125 150
Forward current derating diagram
Electrical characteristics (at Tamb = 25C unless otherwise stated)
40 35 30 25 20 15 10 5 0 0,75
IF (A)
0,8
0,85
0,9 VF (V)
0,95
1
1,05
Forward voltage characteristic
Issue 4 - September 2006
(c) Zetex Semiconductors plc 2006
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www.zetex.com
BYP57 / BYP58
Electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Forward voltage BYP57-75...800 BYP58-75...800 Symbol VF Min. Typ. 1.0 Max. 1.1 Unit V Test contitions IF = 35 A, measuring time 10ms (half-sine wave) IF = 50 A,
Forward voltage BYP57-75...800 (information BYP58-75...800 values) BYP57-75...150 BYP58-75...150 BYP57-200...800 Reverse BYP58-200...800 current BYP57-75...400 BYP58-75...400 BYP57-500...800 BYP58-500...800 Threshold voltage (information value) Slope resistance (information value)
VF
-
0.66 5.75
1.2 3
V
IRRM IRRM V(FO) rF 0.1 1.5 0.25
mA
TJ = 140C, at VRRM
mA
at VRRM
V m
TJ = 175C TJ = 175C
Options: Electrical characteristics for parallel connecting (at Tamb = 25C unless otherwise stated)
Option 1 Parameter Forward voltage difference in one category of forward voltage Reverse current in one category of forward voltage (only for BYP57-300...800 and BYP58-300...800) Symbol VF Min. Typ. Max. 0.05 Unit V Test contitions IF = 35 A, measuring time 10ms (half-sine wave) at VRRM
2
IR
-
-
0.01
mA
Issue 4 - September 2006
(c) Zetex Semiconductors plc 2006
4
www.zetex.com
BYP57 / BYP58
Packaging details
Package dimensions
Dimensions in millimeters are control dimensions, dimensions in inches are approximate DIM A A1 A2 D D1 D2 D3 MIN 18,00 5,90 2,10 15,50 12,72 11,50 1,33 Millimeters TYP 18,50 6,10 2,30 15,70 12,77 11,70 1,36 Inches TYP 0,728 0,240 0,091 0,618 0,503 0,461 0,054
MAX 19,00 6,30 2,50 15,90 12,82 11,90 1,39
MIN 0,709 0,232 0,083 0,610 0,501 0,453 0,052
MAX 0,748 0,248 0,098 0,626 0,505 0,469 0,055
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 4 - September 2006
(c) Zetex Semiconductors plc 2006
5
www.zetex.com


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